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| PROFET(R) BTS 542 E2 Smart Highside Power Switch Features * Overload protection * Current limitation * Short-circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection2) * Electrostatic discharge (ESD) protection Application auto-restart and hysteresis Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 mW 21 A 70 A TO-218AB/5 5 Standard * mC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSa chip on chip technology. Fully protected by embedded protection functions. R bb +V bb 3 Voltage source Overvoltage protection Current limit Gate protection 8 Logic Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load OUT 2 IN Temperature sensor 5 ESD Logic detection Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group Page 1 of 13 8.Jan.96 BTS 542 E2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 W, RL= 1.1 W, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb VLoad dump3) Values 63 80 self-limited -40 ...+150 -55 ...+150 167 2.1 2.0 -0.5 ... +6 Unit V V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST 5.0 5.0 Thermal resistance chip - case: junction - ambient (free air): RthJC RthJA 0.75 K/W 45 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Semiconductor Group Page 2 8.Jan.96 BTS 542 E2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics Tj=25 C: RON Tj=150 C: Nominal load current (pin 3 to 5) IL(ISO) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or IL(GNDhigh) GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: ton Turn-off time to 10% VOUT: toff RL = 12 W, Tj =-40...+150C Slew rate on dV /dton 10 to 30% VOUT, RL = 12 W, Tj =-40...+150C Slew rate off -dV/dtoff 70 to 40% VOUT, RL = 12 W, Tj =-40...+150C Operating Parameters Operating voltage 4) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis DVbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection5) Tj =-40C: Ibb=40 mA Tj =25...+150C: Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)6), VIN=5 V On-state resistance (pin 3 to 5) IL = 5 A -17 -- 15 28 21 -- 18 35 -1 mW A mA 100 10 0.2 0.4 ----- 350 130 2 5 ms V/ms V/ms Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 4.5 2.4 ---42 42 -60 63 ----- ---6.5 0.2 --0.2 -67 12 18 6 1.1 42 4.5 4.5 7.5 -52 ---25 60 --- V V V V V V V V V DVbb(under) Vbb(over) Vbb(o rst) Vbb(AZ) Ibb(off) IL(off) IGND DVbb(over) mA mA mA 4) 5) 6) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load . Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 8.Jan.96 BTS 542 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5)7), IL(SCp) ( max 400 ms if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 30 ms --45 30 80 --150 --- -95 -70 -58 8.3 -10 -- 140 ---400 ----2.1 1.7 1.2 32 -- A A ms V V C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation8), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 9) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) VON(CL) VON(SC) Tjt EAS ELoad12 ELoad24 -Vbb Rbb ,Tjt --- -120 W V Tj=-40 C: IL (OL) Tj=25..150C: 2 2 --- 1900 1500 mA 7) 8) Short circuit current limit for max. duration of td(SC) max=400 ms, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= o VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Semiconductor Group Page 4 8.Jan.96 BTS 542 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback10) Input turn-on threshold voltage VIN(T+) Tj =-40..+150C: VIN(T-) Tj =-40..+150C: 1.5 1.0 -1 10 80 350 --0.5 -25 200 -- 2.4 --30 50 400 1600 V V Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5 V Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: D VIN(T) IIN(off) IIN(on) td(ST SC) td(ST) mA mA ms ms V V VST(high) VST(low) 5.4 -- 6.1 -- -0.4 10) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group Page 5 8.Jan.96 BTS 542 E2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 11) Status 542 D2 H H H L H L H H (L12)) L L L13) L13) L L 542 E2 H H H L H L H H (L12)) L L H H H H H L L H H L L L L L L Terms 3 2 I ST V IN VST 4 IN Ibb Status output +5V R ST(ON) VON I IN Vbb PROFET ST GND 1 R GND IGND OUT IL 5 ST GND VOUT ESDZD V bb ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 W at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN I ESDZD1 ZD1 I I GND ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 11) 12) 13) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Semiconductor Group Page 6 8.Jan.96 BTS 542 E2 Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high +V Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high bb +V bb V ON OUT ON VON Logic unit Short circuit detection OUT Logic unit Open load detection Inductive and overvoltage output clamp +V bb V Z GND disconnect V ON 3 OUT GND 2 IN Vbb VON clamped to 58 V typ. PROFET 4 V bb bb OUT 5 ST Overvolt. and reverse batt. protection +V GND 1 VGND VV IN ST R IN V Z R bb Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. IN Logic V OUT GND disconnect with GND pull up 3 GND R ST ST PROFET 2 IN Vbb R GND Signal GND PROFET 4 ST GND 1 V bb VV IN ST V GND OUT 5 Rbb = 120 W typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Semiconductor Group Page 7 8.Jan.96 BTS 542 E2 Vbb disconnect with charged inductive load 3 high 2 IN Vbb Inductive Load switch-off energy dissipation E bb EAS PROFET 4 ST GND 1 V bb OUT IN 5 Vbb PROFET OUT ELoad = ST GND EL ER 3 high IN 2 ST Vbb Energy dissipated in PROFET EAS = Ebb + EL - ER. ELoad < EL, EL = 1/2 * L * I L OUT 2 PROFET 4 GND 1 V bb 5 Semiconductor Group Page 8 8.Jan.96 BTS 542 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 542D2 542E2 D X X X X E Overtemperature protection Tj >150 C, latch function14)15) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.14) (when first turned on after approx. 200 ms) Open load detection in OFF-state with sensing current 30 mA typ. in ON-state with sensing voltage drop across power transistor X X X X X -16) X X X X X X X X X X -16) X - Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) 14) 15) 16) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage Low resistance short Vbb to output may be detected by no-load-detection Semiconductor Group Page 9 8.Jan.96 BTS 542 E2 Timing diagrams Figure 1a: Vbb turn on: IN IN t d(bb IN) td(ST) ST AAAA AAAA AAAA *) AAAA AAAA AA AAAA AA Figure 2b: Switching an inductive load V bb OUT AAAAAAAAAAAAAAA AAA AA AAAAAAAAAAAAAAAAAAAAA AA A A AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AAA AA A AAA AA AAAA AA AAA AAAA AAAAAAA AA AA AAAAAAAA A AAA AA AAAA AAAAAAA AA AAA AA V V OUT ST open drain AAA AAA AA AAAAAAAAAAAAAAA AAA AAAA AA A AAAA AAAAAAA AAAAA A AAAA AAAA A AAA AA AAAAAAAAAAAAAAA AAA AAAA AA A AAA AAAA AAAAAAA AAAAAAAAAAA AAA t A AAAA AAAAAAA AAA A AAAA A AAA AA AAA AA AAA AA AAA AA A AAA AA in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 ms I L IL(OL) t *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t t td(SC) approx. 200ms if Vbb - VOUT > 8.3 V typ. Semiconductor Group Page 10 8.Jan.96 BTS 542 E2 Figure 3b: Turn on into overload, IN IN Figure 4a: Overtemperature: Reset if Tj I L(SCp) I L(SCr) ST V OUT T ST t J t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load IN IN ST ST t d(ST) V OUT V OUT IL I **) L open t t **) current peak approx. 20 ms Semiconductor Group Page 11 8.Jan.96 BTS 542 E2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] V on IN VON(CL) off t d(ST OL1) ST t d(ST OL2) V OUT V off bb(over) Vbb(u rst) I L V bb(o rst) normal open normal V t bb(under) V bb(u cp) on V bb td(ST OL1) = tbd ms typ., td(ST OL2) = tbd ms typ Vbb [V] charge pump starts at Vbb(ucp) =6.5 V typ. Figure 6a: Undervoltage: IN Figure 7a: Overvoltage: IN V bb V bb(under) Vbb V ON(CL) Vbb(over) V bb(o rst) 8bb(u rst) Vbb(u cp) V V OUT OUT ST open drain ST t t Semiconductor Group Page 12 8.Jan.96 BTS 542 E2 Package and Ordering Code All dimensions in mm Standard TO-218AB/5 BTS 542 E2 Ordering code Q67060-S6951-A2 Semiconductor Group Page 13 8.Jan.96 |
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